Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices
نویسنده
چکیده
We present a methodology for the identification of transport parameters for Gallium Nitride (GaN) based semiconductor materials and devices. A Monte Carlo (MC) approach has been employed to investigate the electron transport in GaN and AlGaN, materials that are very important in device applications of high-power, high-frequency electronics. Our model is validated against measured data and compared to published simulation results. It enables to understand effects taking place in this material system, and it provides inputs for macroscopic modeling of electronic devices. Various MC model parameters and simulation results are compared. A special approach on the piezoelectric scattering mechanism taking care of the hexagonal crystal structure is used.
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